Scientists in the US fabricate the first gallium arsenide LED emitting at 1.5 microns. "Our result is important because it combines two very desirable properties: compatibility with fiber-optics at ...
Future high-speed communications devices will require efficient long-wavelength emitters that are compatible with integrated circuits. The development of a 1.5 μm GaAs LED is an important step forward ...
A team of researchers led by the UK’s University of Cambridge has developed an adhesive-free method of bonding ultra-thin gallium arsenide (GaAs) solar cells to borosilicate glass. The technique, ...
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