Imec showed this week’s IEDM meeting its co-integration of high-performance Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200 V GaN-on-SOI smart power IC on 200 mm substrates.

Gallium nitride (GaN) has emerged as a key material in the semiconductor industry, with substantial benefits over older silicon-based technologies. Gallium nitride (GaN) is a promising semiconductor ...

WASHINGTON, D.C., Dec. 15, 2015 - A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of ...

Part 1 of this article series on gallium nitride (GaN) fundamentals described crystal structures and the formation of the two-dimensional electron gas (2DEG), along with material figures of merit and ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Modelithics, a provider of RF and microwave simulation models, has added new high-power Guerrilla RF GaN HEMT models to the ...