Micron Technology recently unveiled 176-layer, triple-level-cell (TLC), 3D NAND flash memory with a 30% smaller die size that employs a new replacement-gate (RG) NAND technology. The chips offer a 35% ...

This is going to be a column that’s divided into three sections. It’s based on a question that a student posed in the EEWeb forums, and he also sent it directly to yours truly. The core of this ...

This CMOS two-input combination NAND/NOR gate is a three-input, fourpin logic gate. A p-channel enhancementtype MOSFET (Q1) and an n-channel enhancement-type MOSFET (Q4) form one complementary ...

NAND Flash is a type of non-volatile memory technology that has revolutionized data storage in the digital age. It is a form of flash memory, which means it can be electrically erased and reprogrammed ...

The previous article examined the concept of logic gates. They can be made from discrete and active electronic components, although today logic gates are available within integrated circuits. In this ...

Samsung is firing back at Intel with a potent new SSD, but will it stand toe-to-toe with Intel's newer 3D XPoint technology? Share on Facebook (opens in a new window) Share on X (opens in a new window ...