This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

This image shows a state-of-the-art design of GaN p-n junction diodes that has resulted in near-unity ideality factor, avalanche breakdown capability, and record-breaking power performance. Insets ...

A reconfigurable device that can be a p-n diode, a MosFET or a BJT has been made by researchers at SUNY-Polytechnic Institute in Albany, New York. “We can form a single device that can perform the ...

The varactor diode capitalizes on the properties of the depletion layer of a p-n diode. Under reverse bias, the carriers in each region-holes in the p type and electrons in the n type-move away from ...

Figure 2: Nonlinear optical transmission of a 4.8-cm-long silicon waveguide containing a p-i-n diode with and without reverse bias. Figure 3: Average output of the silicon Raman laser with reverse ...