Nanowerk

Advancing GaN-on-Silicon for scalable high electron mobility transistors

(Nanowerk News) A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the ...
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All-optical modulation in silicon achieved via an electron avalanche process

Over the past decades, engineers have introduced numerous technologies that rely on light and its underlying characteristics. These include photonic and quantum systems that could advance imaging, ...
Science Daily

Electron ‘spin’ in silicon will lead to revolutionary quantum chips

A silicon-based nanoscale system which aims to harness the 'spin' of electrons to boost the processing power of future computer systems is being developed. A silicon-based nanoscale system which aims ...
Business Wire

Mechanism of Hydrogen-driven Free-electron Generation in Silicon Elucidated for First Time Ever

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation, Institute of Science Tokyo, University of Tsukuba, and Quemix Corporation announced today that they have achieved the world’s first elucidation ...
Science Daily

GaN-on-Silicon for scalable high electron mobility transistors

Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
EurekAlert!

Illinois team advances GaN-on-Silicon for scalable high electron mobility transistors

A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers ...