Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...
Abstract: As a novel magnetic material, nanocrystalline has attracted much attention because of its high saturation flux density and configurable permeability characteristics. The nanocrystalline ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results